Electrochromic devices embodying W oxide/Ni oxide tandem films
Identifieur interne : 010065 ( Main/Repository ); précédent : 010064; suivant : 010066Electrochromic devices embodying W oxide/Ni oxide tandem films
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Abstract
Six-layer electrochromic devices of indium tin oxide (ITO)/NiOxHy/WO3/ZrP-electrolyte/WO3/ITO were made by reactive dc magnetron sputtering and lamination. The WO3 layer between the acidic ZrP-based electrolyte and the NiOxHy layer served as optically passive protective layer. The optical inactivity of the protective layer could be understood from arguments based on electron density of states. © 2001 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electrochromic devices embodying W oxide/Ni oxide tandem films</title><author><name sortKey="Azens, A" uniqKey="Azens A">A. Azens</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science, The Ångstrom Laboratory, Uppsala University, P.O. Box 534, SE-751 21 Uppsala, Sweden</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">Suède</country><wicri:regionArea>Department of Materials Science, The Ångstrom Laboratory, Uppsala University, P.O. Box 534, SE-751 21 Uppsala</wicri:regionArea><wicri:noRegion>SE-751 21 Uppsala</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Solid State Physics, University of Latvia, Kengaraga 8, LV-1063 Riga, Latvia</s1></inist:fA14><country xml:lang="fr">Lettonie</country><wicri:regionArea>Institute of Solid State Physics, University of Latvia, Kengaraga 8, LV-1063 Riga</wicri:regionArea><wicri:noRegion>LV-1063 Riga</wicri:noRegion></affiliation></author><author><name sortKey="Vaivars, G" uniqKey="Vaivars G">G. Vaivars</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science, The Ångstrom Laboratory, Uppsala University, P.O. Box 534, SE-751 21 Uppsala, Sweden</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">Suède</country><wicri:regionArea>Department of Materials Science, The Ångstrom Laboratory, Uppsala University, P.O. Box 534, SE-751 21 Uppsala</wicri:regionArea><wicri:noRegion>SE-751 21 Uppsala</wicri:noRegion></affiliation></author><author><name sortKey="Veszelei, M" uniqKey="Veszelei M">M. Veszelei</name></author><author><name sortKey="Kullman, L" uniqKey="Kullman L">L. Kullman</name></author><author><name sortKey="Granqvist, C G" uniqKey="Granqvist C">C. G. Granqvist</name></author></titleStmt><publicationStmt><idno type="inist">01-0249908</idno><date when="2001-06-15">2001-06-15</date><idno type="stanalyst">PASCAL 01-0249908 AIP</idno><idno type="RBID">Pascal:01-0249908</idno><idno type="wicri:Area/Main/Corpus">011128</idno><idno type="wicri:Area/Main/Repository">010065</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electrochromic devices</term><term>Electronic density of states</term><term>Experimental study</term><term>Protective coatings</term><term>Sputtered coatings</term><term>Tungsten compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4279</term><term>8115C</term><term>Etude expérimentale</term><term>Tungstène composé</term><term>Revêtement pulvérisation</term><term>Dispositif électrochromique</term><term>Densité état électron</term><term>Revêtement protecteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Six-layer electrochromic devices of indium tin oxide (ITO)/NiO<sub>x</sub>H<sub>y</sub>/WO<sub>3</sub>/ZrP-electrolyte/WO<sub>3</sub>/ITO were made by reactive dc magnetron sputtering and lamination. The WO<sub>3</sub> layer between the acidic ZrP-based electrolyte and the NiO<sub>x</sub>H<sub>y</sub> layer served as optically passive protective layer. The optical inactivity of the protective layer could be understood from arguments based on electron density of states. © 2001 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>89</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Electrochromic devices embodying W oxide/Ni oxide tandem films</s1></fA08><fA11 i1="01" i2="1"><s1>AZENS (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>VAIVARS (G.)</s1></fA11><fA11 i1="03" i2="1"><s1>VESZELEI (M.)</s1></fA11><fA11 i1="04" i2="1"><s1>KULLMAN (L.)</s1></fA11><fA11 i1="05" i2="1"><s1>GRANQVIST (C. G.)</s1></fA11><fA14 i1="01"><s1>Department of Materials Science, The Ångstrom Laboratory, Uppsala University, P.O. Box 534, SE-751 21 Uppsala, Sweden</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Institute of Solid State Physics, University of Latvia, Kengaraga 8, LV-1063 Riga, Latvia</s1></fA14><fA14 i1="03"><s1>Department of Materials Science, The Ångstrom Laboratory, Uppsala University, P.O. Box 534, SE-751 21 Uppsala, Sweden</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>7885-7887</s1></fA20><fA21><s1>2001-06-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0249908</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Six-layer electrochromic devices of indium tin oxide (ITO)/NiO<sub>x</sub>H<sub>y</sub>/WO<sub>3</sub>/ZrP-electrolyte/WO<sub>3</sub>/ITO were made by reactive dc magnetron sputtering and lamination. The WO<sub>3</sub> layer between the acidic ZrP-based electrolyte and the NiO<sub>x</sub>H<sub>y</sub> layer served as optically passive protective layer. The optical inactivity of the protective layer could be understood from arguments based on electron density of states. © 2001 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B40B79</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A15C</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>4279</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>8115C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Tungstène composé</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Tungsten compounds</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Revêtement pulvérisation</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Sputtered coatings</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Dispositif électrochromique</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Electrochromic devices</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Densité état électron</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Electronic density of states</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Revêtement protecteur</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Protective coatings</s0></fC03><fN21><s1>169</s1></fN21><fN47 i1="01" i2="1"><s0>0124M000874</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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